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2.5 Gbit/s Transimpedance Amplifier
Preliminary Data
FOA1251A1 FOA1252A1 Bipolar IC
Features * * * * * Data rate up to 2.5 Gbit/s Full ITU-T G958 specification compliance Input sensitivity -23.5 dBm at BER = 10 -9 High overload: 2 mApp maximum input current Single supply voltage: + 4.5 V to + 5.5 V
P-TSSOP-16-1 * Internal DC-compensation loop increases dynamic range * No external components needed * Internal bias generation for PIN-photodiode * Internal low-pass filter to improve power supply rejection * Operates with PIN- or APD-photodiode * Monitor output for mirrored photodiode current * Additional pair of complementary output pins optimized for TO packages
Applications * Fibre optics data communication systems: SDH, SONET, ATM, OC, STM * Pre-amplifier modules
Type FOA1251A1 FOA1252A1
Semiconductor Group
Ordering Code Q67000-H4127 Q67000-H4128
1
Package P-TSSOP-16-1 bare die
July 1998
FOA1251A1 FOA1252A1
0.5 k FILTER Vref = 4.2 V 1.6 k
FOA1251A1 FOA1252A1
VCC
GND
60 IN -40 +4.0 +9.2 60
Q+
Q-
DC compensation
Vref
MONITOR
s
Figure 1 Block diagram.
Table 1 Symbol
Pin Description Function Supply voltage Data input from PIN- or APD-photodiode Non-inverting data output Inverting data output Bias voltage for PIN-diode Mirrored photodiode current (connect pin via 0 ... 2 k to VCC) Ground
VCC
IN Q+ Q- FILTER MONITOR GND
Semiconductor Group
2
July 1998
FOA1251A1 FOA1252A1
Electrical Characteristics
Absolute Maximum Ratings
Stresses listed below here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Ambient temperature Tamb = -40 C ... +85 C
Parameter Supply voltage Junction temperature Storage temperature Relative ambient humidity ESD integrity
Symbol
Limit Values min. max. 6.0 +125 +150 85/85 -0.5 -40 -40 500
Unit V C C
Remarks
VCC Tj TS VESD
%/C no condensation V see note
Note: HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard S5.1-1993
Recommended Operating Conditions
Ambient temperature Tamb = -40 C ... +85 C
Parameter Supply voltage Data transmission rate Supply current Thermal resistance Junction temperature
Symbol
Limit Values min. typ. +5.0 2.5 46.7 140 -10 +125 max. +5.5 +4.5
Unit V Gbit/s mA K/W C
Remarks
VCC ICC
JA
see note 1) see note 2)
Tj
Note: 1) Junction-to-ambient thermal resistance measurement conditions for packaged device: PCB area: 10 cm x 10 cm x 1.5 mm; copper area approx. 60 %; via holes to ground layer underneath the device; all pins soldered. 2) Do not exceed the maximum junction temperature. If used as packaged version, provide sufficient PCB heat sink to the device by soldering all pins and sufficient copper area underneath the chip (see note 1).
Semiconductor Group
3
July 1998
FOA1251A1 FOA1252A1
AC/DC Characteristics Conditions: Tamb = +25 C, VCC = +5.0 V, Cexternal = 0.85 pF
Parameter Supply current Input voltage Input current Input current before clipping Input resistance Input sensitivity Optical overload Transimpedance Output voltage swing (Q+ - Q-) Bandwidth (-3 dB) Output resistance Output voltage Output pattern jitter
(Note 1)
Symbol
Limit Values min. typ. 47 +1.65 2200 30 max. 57
Unit mA V
Remarks
IVCC VIN IIN IIN,CL
App (Note 1) App
RIN PIN POVL RT
VOUT 0.6
40 -23.5 +0.5 26 0.78 1600 48 60 72 1.1
dBm BER < 10 -9 (Note 1) dBm BER < 10 -9 (Note 1) k Vpp differential into 2 x 50 MHz V ps ps dB 600 V kHz AC-coupled outputs (via 22 nF) internally connected to VCC (Q+ + Q-)/2
50 App < IIN < 500 App 500 App < IIN < 2 mApp
f3db Rout VCMOUT tj,P
VCC - 0.6
15 45 35 400 500 +4.2 65
Power supply rejection PSSR ratio Bias resistance Bias voltage Low frequency cutoff
f < 10 MHz
(Note 2)
RBIAS VBIAS f3db, low
Note: 1) Data rate: 2.5 Gbit/s; data sequence: PRBS 2 23-1 2) Generated noise on power supply: sine curve, 100 mVpp (see application note b)
Semiconductor Group
4
July 1998
FOA1251A1 FOA1252A1
Package information
P-TSSOP-16-1
VCC GND GND IN FILTER GND GND NC 1 2 16 15 NC GND GND QQ+ GND GND MONITOR
3 4 5 6 7 8
FOA1251A1
14 13 12 11 10 9
NC: not connected
Figure 2
Package pinning.
bare die
GND GND GND GND GND
QVCC NC Size: 1,31 * 1,00 mm2
IN
FOA1252A1
GND
GND QGND Q+ GND MONITOR Q+
FILTER GND NC
GND
GND
GND
GND
NC: not connected
Figure 3
Pad assignment.
Semiconductor Group
5
GND
July 1998
FOA1251A1 FOA1252A1
Eye-diagrams measured at data rates of 2.5 Gbit/s
ext. modulator EDFA
optical out: -2 dBm
Attenuator
Q+ IN
FOA1252 (DUT)
el.* Q-
TEK CSA803A
opt.**
monitor out: -8 dBm
STM16 Bit pattern generator
* electrical input: sampling head SD26, bandwidth 20 GHz, risetime < 17.5 ps
** optical input: O/E-converter head SD26, bandwidth 20 GHz, opt. pulse response speed (FWHM) < 28.5 ps
Figure 4
Measurement set-up.
Figure 5
Eye diagrams at input power -20 dBm (top) and -25 dBm (bottom).
6 July 1998
Semiconductor Group
FOA1251A1 FOA1252A1
Bit error rate (BER) measurements
inp Coupler
Clock & Data Recovery
ref
clock
data
SDH RX
SDH TX
10dB
Attenuator
10dB
TIA (DUT)
10dB
LG 1605 (AT&T)
Figure 6
Measurement set-up.
BER
10
-5
BER T=20C
10
-7
10
-9
10
-11
-26
-25
-24
-23
-22
optical input power [dBm]
Figure 7 Measured bit error rate for STM-16 signal.
Semiconductor Group
7
July 1998
FOA1251A1 FOA1252A1
Application notes a) General information * The output pins Q+ and Q- must be terminated equally to prevent instabilities. * It is recommended to minimize stray capacitance when connecting photodiode to transimpedance amplifier. * To improve power supply rejection ratio (PSRR), VCC should be supplied via resistor (4.7 ), capacitor (100 nF) to GND, and inductor (BLM11A601, Murata) to VCC-pin. * The monitor pin (not used in these application notes) must be left open or connected to VCC via resistor of 0 ... 2 k. b)
L* 4.7 VCC 100 nF GND VCC
PINDiode
FILTER
Q+ FOA1251/2
22 nF Q+
IN GND
Q-
Q22 nF
*) BLM11A601, Murata
Figure 8 Application using PIN-photodiode. c)
L* 4.7 VCC 100 nF VAPD x k FILTER x nF IN GND VCC GND
Q+ FOA1251/2 Q-
22 nF Q+
Q22 nF
APD-Diode
*) BLM11A601, Murata
Figure 9 Application using APD-photodiode.
Semiconductor Group 8 July 1998
FOA1251A1 FOA1252A1
d)
Vcc
TO-can
PIN-Diode
Note: no external components needed.
OUT +
NC
GND GND GND GND GND
FOA1252
GND GND GND GND GND
OUT-
FILTER
GND
GND
VCC
IN
Q+
GND
Q+
GND
Q-
GND
NC
Q-
Figure 10
Application example of FOA1252 mounted in TO-can.
Package outline of P-TSSOP-16-1 (Plastic Thin Shrink Small Outline)
Sorts of Packing For more information on package outlines for tubes, trays, etc. see our Data Book "Package Information" (Ordering No. B192-H663-7400). Dimensions in mm SMD = Surface Mounted Device Semiconductor Group 9 July 1998

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